FinFET with body contact

ABSTRACT

A semiconductor device has a FinFET with at least two independently controllable FETs on a single fin. The fin may have a body area with a width between two vertical sides, each side has a single FET. The fin also may have a top fin area that is wider than the body area and is electrically independent from the two FETs. The top fin area may be capable of receiving a body contact structure which may be connected to an electrical conductor as to regulate the voltage in the body area of the fin.

FIELD

This invention relates generally to semiconductor devices, and morespecifically to FinFETs.

BACKGROUND

A semiconductor device is a component of most electronic systems. Fieldeffect transistors (FETs) have been the dominant semiconductortechnology used to make application specific integrated circuit (ASIC)devices, microprocessor devices, static random access memory (SRAM)devices, and the like for many years. In particular, complementary metaloxide semiconductor (CMOS) technology has dominated the semiconductorprocess industry for a number of years.

Technology advances have scaled FETS on semiconductor devices to smalldimensions allowing power per logic gate to be dramatically reduced, andfurther allowing a very large number of FETs to be fabricated on asingle semiconductor device. However, traditional FETS are reachingtheir physical limitations as their size decreases. FinFETs are a recentdevelopment. FinFETs use three dimensional techniques to pack a largenumber of FETs in a very small area.

SUMMARY

One embodiment is a FinFET with a semiconductor fin formed on asubstrate. The fin further has a body area having substantially the samewidth between two or more vertical surfaces and a top fin area extendingfrom the body area, the width of the top fin area wider than the widthof the body area. The top fin area may receive a body contact structure.The fin also has a first FET having a first gate electrode, which ismade up of a first polysilicon layer formed on a first vertical surfaceof the fin, separated from the first polysilicon layer by a thin oxidelayer. Also the fin has a second FET having a second gate electrodecomprising a second polysilicon layer formed on a second verticalsurface of the fin, separated from the second polysilicon layer by athin oxide layer. The second gate electrode may be electricallyindependent from the first gate electrode.

One embodiment is a method of making a FinFET having a body contactstructure. It includes the steps of supplying a FinFET having asemiconductor fin on a substrate. The fin has a body area havingsubstantially the same width between two or more vertical surfaces. Afirst FET is formed having the first gate electrode having the firstpolysilicon layer formed on the first vertical surface of the body areaof the fin separated from the first polysilicon layer by a first gateoxide layer. Also, a second FET is formed having a second gate electrodehaving a second polysilicon layer substantially formed on a secondvertical surface of the body area of the fin, separated from the secondpolysilicon layer by a gate oxide layer. The second gate electrode iselectrically independent from the first gate electrode. A top fin areais added extending from the top surface of the body area of the fin. Thewidth of the top fin area is wider than the width of the body area forreceiving a body contact structure

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be better understood from the following detaileddescription with reference to the drawings, in which:

FIG. 1 is a prior art isometric drawing of a FinFET.

FIG. 2A is a prior art drawing showing a top view of the FinFET of FIG.1 and identifies a cross section A-A′.

FIG. 2B is a prior art drawing showing a cross sectional view A-A′ ofthe FinFET of FIG. 2A.

FIGS. 3A-19C show sequential views of an exemplary FinFET structureaccording to an embodiment. Figures with the same numeric labelcorrespond to the same stage of manufacturing. Figures with the suffix“A” are top-down views. Figures with the suffix “B” or “C” are verticalcross-sectional views along the plane B-B′ or C-C′, respectively, of thecorresponding figure with the same numeric label and the suffix “A.”

FIG. 20 shows a three dimensional view of a FinFET structure having twoindependently controllable, parallel connected FET devices and a top finarea for receiving a body contact structure according to an embodiment.

FIG. 21 shows a flowchart of a method of making a FinFET with the bodycontact structure according to an embodiment.

FIG. 22 illustrates a circuit diagram of a plural differential pairtransistor circuit according to an embodiment.

FIG. 23 is an isometric view of the plural differential pair transistorcircuit of FIG. 22 using FinFET structures according to an embodiment.

FIG. 24 illustrates a circuit diagram of another plural differentialpair transistor circuit according to an embodiment.

DETAILED DESCRIPTION

Features illustrated in the drawings are not necessarily drawn to scale.Descriptions of well-known components and processing techniques areomitted so as to not unnecessarily obscure the disclosed embodiments.The descriptions of embodiments are provided by way of example only, andare not intended to limit the scope of this invention as claimed. Thesame numbers may be used in the Figures and the Detailed Description torefer to the same devices, parts, components, steps, operations, and thelike.

The making of traditional FETs is currently running into physicalbarriers when creating small, fast semiconductor devices. Gate oxideshave become thin enough that current leakage occurs through the gateoxides. Further scaling of gate oxide thickness will bring anexponential increase in current leakage. Power dissipated by currentleakage has become a significant portion of total device power, and anexponential increase in current leakage may result in unacceptable powerdissipation for many types of devices.

Silicon on Insulator (SOI) processes that have been introduced havereduced FET source and drain capacitances, resulting in an improvedpower/performance ratio for CMOS devices fabricated in an SOI process.However, conventional SOI processes are also reaching fundamentallimits, resulting in undesirable effects such as the current leakageeffects mentioned above. Therefore, innovative ways to make CMOS devicesare being created such as FinFETs.

A FinFET is a FET device that utilizes three dimensional techniques topack a large number of FETs in a given area of a semiconductor deviceand addresses the scaling problems described above. FinFETs have atleast one narrow, semiconductor fin, preferably less than 10 nm inwidth. This fin is gated by electrodes at one or more locations alongthe length of the fin. Prior art FIG. 1 shows an isometric view of aFinFET 10. A substrate 12 (typically silicon) may be on an insulativeburied oxide 11. The substrate 12 may also be insulated on its sides bya recessed oxide 13. A tall, thin fin 14 of semiconductor material (alsotypically silicon) rises from the substrate 12. The fin 14 includes afirst source/drain area 15 and second source/drain area 16. The FinFET10 includes a gate electrode 17 that surrounds fin 14 on three of thesides of fin 14. The gate electrode 17 may be a conductor such as apolysilicon, shown in prior art FIG. 2B. A gate oxide layer 19 insulatesthe gate electrode 17 from silicon material in the fin 14 and substrate12. The gate oxide layer 19 may be much thinner than the gate electrode17. In regions where the silicon material is doped, for example P− (foran N-channel FET, an NFET), first source/drain area 15 and secondsource/drain area 16 are also doped to become N+ regions, with the P−region under gate electrode 17 serving as a body (not shown in FIG. 1)of the FinFET 10.

FinFETs have significant advantages. Being “three dimensional” FETs, thegate electrode 17 may induce conducting channels on three sides of thefin 14, increasing current flow through a conducting FET, and making itless necessary that the gate oxide layer 19 be as thin as the gate oxideof a conventional planar FET.

FIG. 2A is a prior art drawing showing a top view (i.e., looking “down”toward substrate 12) of a FinFET 10. First source/drain area 15 andsecond source/drain area 16 are doped N+ (for an NFET). To betterillustrate the makeup of the FinFET 10, a cross sectional view at A-A′is shown in FIG. 2B. A body 20 is the portion of fin 14 that is the bodyof the FinFET 10, and is doped P− for an NFET. (A P-channel FET (PFET)would begin with an N− doped fin, the first source/drain area 15 andsecond source/drain regions 16 of the PFET subsequently doped P+.) Thegate oxide layer 19 is shown covering both sides and the top of body 20as well as the top of substrate 12. Gate electrode 17 is the gate of theFinFET and surrounds both vertical sides and the top of the body 20. Itis separated from body 20 by gate oxide layer 19. When gate electrode 17turns on the FinFET 10 (e.g., is a high voltage relative to source foran NFET), carriers conduct from first source/drain area 15 to secondsource/drain area 16 and other carriers conduct from the secondsource/drain area to the first source/drain area in a direction into (orout of) the page, in FIG. 2B, in portions of body 20 near gate oxidelayer 19.

One will note in prior art FIG. 2B that the exposed surfaces of the body20 and substrate 12 are totally surrounded by insulating material.Buried oxide 11 is at the bottom of substrate 12; recessed oxide 13surrounds the sides of substrate 12; and gate oxide layer 19 surroundsthe left, right, and top sides of body 20. Therefore, no electricalconnection to body 20 may be made to control a voltage on the body 20,other than the P−/N+ junctions (for an NFET) between body 20 and firstsource/drain area 15 and second source/drain area 16. The body voltage,relative to a voltage on the first source/drain area 15 of the FET,tends to “float”. For example, when the FET is “off”, source to drainvoltage may be relatively high, and junction current leakage from thedrain may charge the body 20. However, if the body voltage becomes morethan a diode drop difference from the source voltage, then thebody/source junction will begin to forward bias, clamping the bodyvoltage to be no more than one diode drop difference than the sourcevoltage. (For silicon, diode drops are approximately 0.7 volts.)

Actual body voltage relative to the source depends on a number offactors, including temperature and switching history of the FET. Athreshold voltage of a FET is dependent in part on a voltage differencebetween the source and the body 20. A number of circuits rely on a knownsource to body voltage for proper operation. Examples of such circuitsthat rely on a known source to body voltage for proper operationinclude, but are not limited to, differential receivers, operationalamplifiers, and the like.

Circuits that rely on known source to body 20 voltages require the body20 be tied to a voltage. Often, NFET bodies are coupled to ground andPFET bodies are tied to a positive supply, referred to as Vdd. FETs usedin a differential stage having gates coupled to a true and a complementsignal have their bodies coupled together. It would be advantageous tocreate a FinFET with a body contact structure so that the FinFET bodymay be coupled to a voltage supply, or to other FinFET bodies and stillmaintain functionality of the FinFET.

FIGS. 3A-19C show sequential views of exemplary manufacturing stages ofan exemplary FinFET structure according to an embodiment. Figures withthe same numeric label correspond to the same stage of manufacturing.Figures with the suffix “A” are top-down views. Figures with the suffix“B” or “C” are vertical cross-sectional views along the plane B-B′ orC-C′, respectively, of the corresponding figure with the same numericlabel and the suffix “A.” The Figures are not drawn to scale. Thedimensions may vary in some embodiments. Also the shapes of the Figuresmay depict ideal shapes. Variations in actual manufacturing may resultin structures deviating from the depicted figures.

Referring to FIGS. 3A-3C, according to an aspect, a FinFET structure, asshown in the figures, may be fabricated according to known techniques.In FIGS. 3A-3C, the shown FinFET structure is referred to asemiconductor device 100. However, the semiconductor device 100generally refers to the FinFET structure in the various manufacturingstages described herein. A buried oxide layer 102 may form the base ofthe semiconductor device 100. The buried oxide may be any insulator suchas SiO2 or HfO2. A substrate 104 may be on the buried oxide layer 102.The substrate 104 may be single crystal silicon. However, substrate 104may comprise other appropriate semiconducting materials, including, butnot limited to, SiC, Ge alloys, GaP, InAs, InP, SiGe, GaAs, other III/Vor II-VI compound semiconductors or other crystalline structures. Thesides of the substrate 104 may be insulated by a recessed oxide layer106. Recessed oxide layer 106 may be any suitable insulator/dielectricsuch as SO2 or HfO2.

A body area 108 is shown within a semiconductor fin 110 on the substrate104. Fin 110 may be a silicon based structure that rises from substrate104 and has a doping suitable for the body area 108 of a FET (e.g., P−doping, in the case of an NFET). The body area 108 may have a dopantconcentration typically in the range from about 5.0*10¹⁴/cm³ to about5.0*10¹⁷. Besides silicon, the fin 110 may comprise other appropriatesemiconducting materials, including, but not limited to, SiC, Ge alloys,GaP, InAs, InP, SiGe, GaAs, other III/V or II-VI compound semiconductorsor other crystalline structures. The height of the fin 110 may be in therange from about 50 nm to 1000 nm, although larger or smaller heightsare also contemplated. The width of the semiconductor fin 110 preferablyis from 25 nm to 500 nm, although larger or smaller widths are alsocontemplated. The ratio between the height and width of the fin 110 maybe of a ratio of 2:1, although other ratios are contemplated. Also theillustration of the fin 110 is an ideal shape of the fin 110. The fin110 may be substantially rectangular in shape, however, variations inmanufacturing may make the corners of the fin 110 rounded, and thevertical sides of the fin 110 may not be parallel with one another orperpendicular to polysilicon layer 130.

A gate oxide layer 120 has been deposited on the entire fin 110,substrate 104, and recessed oxide layer 106. Gate oxide layer 120 may beany dielectric suitable as a gate dielectric of a FET, for examples,SiO2 or HfO2. The gate oxide layer 120 may be very thin, as thin as 1 nmto 3 nm in thickness. A gate metal such as polysilicon is deposited overthe gate oxide layer 120 forming a polysilicon layer 130. Thepolysilicon layer 130 may be thicker than gate oxide layer 120.Polysilicon layer 130 is suitable as a gate electrode material and issuitably doped as a conductor. Polysilicon layer 130 may be silicided(e.g., titanium silicide) to enhance conductivity. However, whilepolysilicon is the preferred material for gate electrodes, it will beappreciated that various other gate materials may be substituted forpolysilicon. Some non-limiting examples of these materials includetungsten, titanium, tantalum, silicon nitride, silicides such as cobaltor nickel silicides, germanium, silicon germanium, other metals, andvarious combinations of the foregoing.

Referring to FIGS. 4A-4C, according to an aspect, a gate definition andetch is performed. The gate definition and etch removes portions of thepolysilicon layer 130 (FIG. 3) from the semiconductor device 100 leavinga strip of the polysilicon layer 130 forming a gate electrode 132.

Referring to FIGS. 5A-5C, according to an aspect, the gate oxide layer120 (FIG. 4) may be removed by an anisotropic etch. The gate oxide layerthat remains under the gate electrode 132, now designated by referencenumber 122, isolates the gate electrode 132 from the fin 110. Afterdeposition and selective etching of gate oxide layer 120 (FIG. 4) andpolysilicon layer 130 (FIG. 3), an ion implant is performed using theremaining portions of gate oxide layer 122 and gate electrode 132 as amask. The ion implant changes the doping of exposed portions of fin 110to be suitable (e.g., N+ doping, in the case of an NFET) for a firstsource/drain area 140 and a second source/drain area 142 in the FETsherein disclosed. The source/drain areas 140 and 142 may have a dopantconcentration from about 1.0*10¹⁹/cm³ to about 5.0*10²¹/cm³, andpreferably from about 1.0*10²⁰/cm³ to about 1.0*10²¹/cm³. The body area108 retains its doping, which is the complementary doping of thesource/drain areas 140 and 142 (e.g., P− doping, in the case of anNFET).

Referring to FIGS. 6A-6C, according to an aspect, an electricalinsulator, insulator 150, may be deposited on the semiconductor device100 to cover fin 110, substrate 104, gate oxide layer 122, and gateelectrode 132. The insulator 150 may be a silicon dioxide SO2, HfO2, orany suitable insulator. SiO2 may be grown by exposing silicon to oxygen.Alternatively, oxide may be deposited. Growing high quality oxide withminimal contamination is time consuming. For this reason, insulator 150may be grown as a thin oxide layer to provide a good electricalinterface and then lesser qualities of silicon oxide may be deposited.

Referring to FIGS. 7A-7C, according to an aspect, the semiconductordevice 100 of FIGS. 6A-6C may be planarized (e.g. chemical-mechanicalpolishing (CMP)), as shown, removing a portion of the insulator 150 tocreate a substantially uniform upper surface. The planarized insulatoris designated by reference number 151. The planarization process mayexpose the upper surface of the gate electrode 132.

Referring to FIGS. 8A-8C, according to an aspect, the semiconductordevice 100 of FIGS. 7A-7C may be subjected to a timed oxide etch toremove a portion of the insulator 151 to produce post-oxide etchinsulator 152. The timed oxide etch exposes part of the first and secondsource/drain areas 140, 142 of the fin 110, but leaves a portion of theinsulator 152 to cover the substrate 104 and recessed oxide 106.

Referring to FIGS. 9A-9C, according to an aspect, a silicon etch may beperformed to lower the first source/drain area 140 and secondsource/drain area 142 shown in FIGS. 8A-8C. The reduction in height maybest be seen in FIG. 9C. Fin 110 is designated fin 112 after the siliconetch. The gate electrode 132 and gate oxide layer 122 isolate the body108 of the fin 112 beneath the gate electrode 132. During the siliconetch, the gate electrode 132 may not be etched away to the degree thatthe first source/drain area 140 and second source/drain area 142 areetched away, especially if the gate electrode 132 is made of polysiliconthat is silicided. This leaves a portion of the body 108 of the fin 112higher than the first source/drain area 140 and second source/drain area142 of the fin 112. Lowering the first source/drain area 140 and secondsource/drain area 142 avoids epitaxially growing silicon on thesource/drain areas 140, 142 during a subsequent manufacturing process,described below with respect to FIGS. 14A-C, in which a semiconductormaterial is epitaxially grown on the body 108.

Referring to FIGS. 10A-10C, according to an aspect, additional insulatormay be deposited on the semiconductor device 100 of FIGS. 9A-9C. Thepreviously deposited insulator 152 together with the additionalinsulator deposited at this stage is designated by reference number 153.As may be seen from the figures the insulator 153 covers the gateelectrode 132.

FIGS. 11A-11C, according to an aspect, show a processing step of anembodiment of the semiconductor device 100 of FIGS. 10A-10C. A timedoxide etch removes a portion of the insulator 153 forming insulator 154,as depicted, exposing an upper surface of the gate electrode 132. Gateelectrode 132 and gate oxide layer 122 cover a top surface of fin 112.The first source/drain area 140 and second source/drain area 142 of thefin 112 are insulated by insulator 154. The timed oxide etch may leave alip or projecting edge L of insulator at each of the four edges of thesemiconductor device 100.

FIGS. 12A-12C, according to an aspect, show another processing step of aselective polysilicon etch to remove the portion of gate electrode 132that is on the top surface of fin 112 of the semiconductor device 100 ofFIGS. 11A-11C. As may best be seen in FIG. 12B the gate electrode 132,now designated reference numbers 134 and 136, is no longer contiguous.However, the gate oxide layer 122 may remain contiguous after this step.The first gate electrode 134 and a second gate electrode 136 are therespective gates for first and second FET structures. The first gateelectrode 134 and second gate electrode 136 may be slightly over-etched,resulting in recesses R on the left and on the right of the fin 112.This over-etching of the gate electrode 132 is performed to prevent thegate electrodes 134, 136 from becoming shorted with (i.e., contacting)an epitaxial growth structure 160 extending from the body area 108 thatis added in a subsequent process described below with respect to FIGS.14A-14C. To keep the gate electrodes 134 and 136 insulated from theepitaxial growth structure 160 of FIGS. 14A-14C, additional insulatormay optionally be applied to the recesses R of the semiconductor device100 in FIGS. 12A-12C and the insulator may be etched accordingly

FIGS. 13A-13C, according to an aspect, show the semiconductor device 100of FIGS. 12A-12C after a selective oxide etch to remove the portion ofgate oxide layer 122 that remained on the top surface of fin 110exposing the body area 108, thereby leaving gate oxide layers 124 (leftportion) and 126 (right portion) as shown.

FIGS. 14A-14C, according to an aspect, show the semiconductor device 100of FIGS. 13A-13C where a mushroom or a balloon like structure, referredto herein as epitaxial growth structure 160, may be formed byepitaxially growing silicon on the exposed body area 108 of the fin 112.As may best be seen in FIG. 14B, the epitaxial growth structure 160 maybe wider than the width of body area 108 of the fin 112 that is betweenthe two FET structures. As shown in FIG. 14B, the widest portion ofepitaxial growth structure 160 may extend beyond the vertical portionsof gates 134, 136. As may best be seen in FIGS. 14A and 14C, the widestportion of epitaxial growth structure 160 may extend to either side ofthe fin 112. The epitaxial growth structure 160 tends to grow at a 1:1ratio from the body area, meaning that for every unit of heightincrease, the radius of the epitaxial growth structure 160 increases bya unit. The epitaxial growth structure 160 may not grow or may grow onlyslightly from the top exposed portions of the polysilicon in first andsecond gate electrodes 134, 136 because epitaxial growths do not growwell on polysilicon and silicided materials. The epitaxial growthstructure 160 and the body area 108 may be the same semiconductormaterial so the epitaxial growth structure 160 may readily bond to thebody area 108 in this stage of manufacturing.

In FIGS. 15A-15C, according to an aspect, additional insulator may beadded to insulator 154 increasing the height of insulator 154, as shown,to form insulator 155. Insulator 155 may cover the entire epitaxialgrowth structure 160 (including the top) of semiconductor device 100 ofFIGS. 14A-14C. Alternatively, insulator 155 may cover a portion of theepitaxial growth structure 160, leaving a portion of the top of theepitaxial growth structure 160 uncovered.

In FIGS. 16A-16C, according to an aspect, the semiconductor device 100of FIGS. 15A-15C may undergo planarization (CMP), reducing the height ofthe device 100. The planarization process may reduce the height of aportion of the epitaxial growth structure 160. In addition, theplanarization process may reduce the height of insulator 155 to forminsulator 156. The planarization process exposes a relatively wide topsurface of the epitaxial growth structure 160, forming the top fin area162. The top fin area 162 of the fin 112 may have a width that extendsbeyond the vertical portions of the gate electrodes 134, 136 of the twoFET structures on the vertical sides of the body area 108. The width ofthe top fin area 162 may be substantially wider than the width of thebody area 108. Preferably, the widest portion (before CMP) of theepitaxial growth structure 160 is exposed. For example, the width of thetop fin area 162 compared to the width of the body area 108 may be twoor three times as wide. As described below with respect to FIGS.19A-19C, a body contact structure 180 is coupled with the top fin area162 in a subsequent process. The larger the surface area exposed on thetop fin area 162, the better the ability to couple this body contactstructure 180 and the top fin area 162. However, the top fin area 162should not be so wide as to prohibit access to the first or secondsource/drain areas 140, 142 (FIGS. 5A-5C).

The top fin area 162 may be doped with the same dopants as the body area108. The top fin area 162 may be heavily doped compared to the body area108. The top fin area 162 may have a dopant concentration from about1.0*10¹⁹/cm³ to about 5.0*10²¹/cm³ and preferably from about1.0*10²⁰/cm³ to about 1.0*10²¹/cm³. This doping increases conductivitybetween the body contact structure to be subsequently formed and the topfin area 162 of the semiconductor device 100. This doping also serves tocompensate any residual doping in the body area 108 that may have beencaused by diffusion of the doping of the source/drain areas 140, 142into the body area 108, thus avoiding shorts between the body contactand the source/drain areas 140, 142. In one embodiment, to reduce thedopant concentration from increasing in the body area 108 due to thehigh dopant concentration in the top fin area 162, the top fin area 162may be doped in a manner that creates a doping gradient through the topfin area 162. In this embodiment, there is a higher doping concentrationat the top of the top fin area 162 and a lower doping concentrationwhere the top fin area 162 is coupled to the body area 108.

In FIGS. 17A-17C, according to an aspect, additional insulator may beadded to insulator 156 forming insulator 157, increasing the height ofinsulator 156 as shown of semiconductor device 100 of FIGS. 16A-16C.

In FIGS. 18A-18C, according to an aspect, a hole 170 may be selectivelyetched in the insulator 157 of the semiconductor chip 100 of FIGS.17A-17C to expose the top fin area 162. The hole 170 may be best seen inFIGS. 18B and 18C. The selective etch forms insulator 158. The hole 170may be formed to be wider than the width of the exposed surface area ofthe top fin area 162. The hole 170 provides a relatively large area forthe deposited body contact structure 180 (added in a subsequentprocessing step, which is described with reference to FIGS. 19A-19C)since there is a greater chance for the body contact structure 180 to bein some contact with the top fin area 162.

FIGS. 19A-19C, according to an aspect, the body contact structure 180may be deposited in the etched hole 170 to couple the body contactstructure 180 with the top fin area 162. Because hole 170 and contactstructure 180 are larger than the exposed top of top fin 160, alignment,including statistical layout and alignment variation, may befacilitated. The body contact structure 180 is typically tungsten (W)but may be any suitable conductive material such as: Ti, Ta, Cu, or Al.Also, the body contract structure 180 may also include a metal compoundliner such as TaN, TiN, and WN to improve adhesion or other structuraland electrical properties of the body contact structures 180. The bodycontact structure 180 may be coupled to any desired circuit node (e.g.supply voltage, ground, a body of another circuit, or to an output ofanother circuit using interconnect structures). The semiconductor device100 thus formed allows for enhanced coupling of the body contactstructure 180 with the gated body 108 of fin 112. The body contactstructure 180 is electrically isolated from the first source/drain area140 and second source/drain area 142, and also from the first gateelectrode 134 and the second gate electrode 136.

FIG. 20 shows a perspective, cross-sectional view of the semiconductordevice 100 illustrated in FIGS. 19A-19C, with the insulator 158 and bodycontact structure 180 omitted for clarity. The first source/drain area140 (FIG. 5A) is shown. The view in FIG. 20 is a cross section throughthe fin 112 in a region of the fin 112 where the FETs are formed, e.g.,along line B-B′ of FIG. 19A. FIG. 20 illustrates a FinFET with thesemiconductor fin 112 formed on the substrate 104. The fin 112 furtherhas a body area 108 having substantially the same width between two ormore vertical surfaces and a top fin area 162 extending from the bodyarea 108, the width of the top fin area 162 being wider than the widthof the body area 108 for receiving a body contact structure 180. The fin112 has a first FET 190 having a first gate electrode 134. The firstgate electrode 134 may include a first polysilicon layer formed on afirst vertical surface of the fin 112. The gate oxide layer 124separates the fin 112 from the first polysilicon layer. In addition, thefin 112 has a second FET 192 having a second gate electrode 136. Thesecond gate electrode 136 may include a second polysilicon layer formedon a second vertical surface of the fin 112. The gate oxide layerseparates the fin 112 from the second polysilicon layer. The second gateelectrode 136 may be electrically independent or isolated from the firstgate electrode 134.

In one embodiment, the Fin FET shown in FIG. 20 includes first andsecond source/drain areas which are formed above the substrate. When thefirst FET 190 is turned on (i.e., place in linear or saturationregions), a current path through the body area 108 is established. Inaddition, a body contact structure 180 may be coupled with top fin area162 as previously described, in various embodiments.

FIG. 21 shows a method 200 of making a FinFET having a body contactstructure 180 according to one embodiment. In operation 205 a finstructure having the semiconductor fin 112 on the substrate 104 isfabricated. The fin 112 may have body area 108 that is substantially thesame width between two or more vertical surfaces. The vertical surfacesmay be substantially perpendicular to the substrate 104. In operation210, a first FET 190 is formed having the first gate electrode. Thefirst gate electrode 134 may be made up of a first polysilicon layerformed on a first vertical surface of the fin 112. The operation 210 mayinclude providing the gate oxide layer 124, which separates the fin 112from the first polysilicon layer. In addition, the operation 210 mayinclude forming a second FET 192 having a second gate electrode 136. Thesecond gate electrode may be made up of a second polysilicon layerformed on a second vertical surface of the fin 112. The operation 210may include providing the gate oxide layer 126, which separates the fin112 from the second polysilicon layer. The second gate electrode 136 maybe electrically independent or isolated from the first gate electrode134.

In operation 215, a top fin area 162 is added extending from the topsurface of the body area 108 of the fin 112. The width of the top finarea 162 is wider than the width of the body area 108 for receiving abody contact structure 180.

FIG. 22 illustrates a plural differential pair transistor circuit 300according to various embodiments. The semiconductor device 100 may beemployed to implement the plural differential pair transistor circuit300 as described below. The plural differential pair transistor circuit300 includes a first differential pair of transistors 302, 304 and asecond differential pair of transistors 306, 308. The first and secondpair of transistors may be operated together or independently. It shouldbe noted that differential pair of transistors means the transistorsthat make up a differential pair such as the transistors 302, 304 makingthe first differential pair of transistors and the transistors 306, 308making the second differential pair of transistors. The term parallelpair of transistors means the pair of transistors that are in parallelwith each other such as transistors 302, 306 making a first parallelpair and transistors 304, 308 making a second parallel pair. The sourcenodes of transistors 302, 304, 306, and 308 are coupled at a common node310 with a current source 312. The current source 312 may be anysuitable current source, such as a transistor current source. Oneterminal of the current source 312 may be coupled with a ground asshown. The drain nodes of transistors 302 and 306 are coupled at acommon drain node 314 with a resistor R1. The drain nodes of transistors304 and 308 are coupled at a common drain node 316 with a resistor R2.The resistors R1 and R2 may be coupled in parallel with a supply voltage(Vcc) 318. The resistors R1 and R2 may be any suitable resistiveelements, such as resistors or transistors. All of the transistors 302,304, 306, and 308 in the plural differential pair transistor circuit 300have their body contacts coupled together at body node 326. It may be anadvantage to have the body contacts of the transistors 302, 304, 306,and 308 coupled together so the bodies of the transistors havesubstantially equal voltages thereby giving the transistorssubstantially equal threshold voltages.

The threshold voltage may generally be defined as the gate voltage wherean inversion layer forms at the interface between the insulating layerand the body of a transistor. If the gate voltage is below the thresholdvoltage, the transistor is turned off. If the gate voltage is above thethreshold voltage, the transistor is turned on (e.g., in linear orsaturation regions). The threshold voltage for a transistor generallyvaries with the voltage difference between the source node and the body.In addition, the threshold voltage varies with the thickness of theinsulating layer between the gate and the body. Further, the thresholdvoltage varies with temperature. If the threshold voltage for eachtransistor in a differential pair is different, the current-voltage(“I-V”) characteristics of the transistors may not match. It isimportant that the transistors in a differential pair have matched I-Vcharacteristics. Coupling the body contacts of the transistors 302, 304,306, and 308 causes the threshold voltages of the transistors to besubstantially equal. In the absence of coupling the body contacts of thetransistors 302, 304, 306, and 308 together, the body voltages of thetransistors may not be equal under various conditions, leading tomismatched I-V characteristics, resulting in poor performance.

In the shown embodiment, first parallel pair of transistors 302, 306 andsecond parallel pair of transistors 304, 308 may operate together. Thegate electrodes of transistors 302 and 306 may couple together to forman input Vin1 (320), and the gate electrodes of transistors 304 and 308may couple together to form an input Vin2 (322) to the pluraldifferential pair transistor circuit 300. In the shown embodiment, thecommon drain node 316 of transistors 304 and 308 may couple with anoutput Vout (324). In another embodiment, an output may be taken fromthe common drain node 314. In yet another embodiment, differentialoutputs may be taken from the common drain nodes 314, 316. By operatingthe first and second differential pair of transistors 302, 304, 306, 308together, the plural differential pair transistor circuit 300 may behaveas a single differential pair having gain and other properties that arethe sum of the two pairs.

In an alternate embodiment, the gate nodes of transistors 302 and 306are not coupled, and the gate nodes of transistors 304 and 308 are notcoupled. In this embodiment, each gate is an independent input. Inaddition, the first parallel pair of transistors 302, 306 and the secondparallel pair of transistors 304, 308 may each have independent outputs.

In one embodiment, three or more differential pairs of transistors maybe provided by having two or more parallel fins, each fin having asemiconductor 100 according to the principles of the invention.

In one embodiment, the body node 326 may be coupled to the source 310.

FIG. 23 illustrates one embodiment of the plural differential pairtransistor circuit 300 using FinFETs with body contacts, i.e., thesemiconductor 100 described above. The plural differential pair 300 maybe constructed using the structures and processes described herein forcreating FinFETs with body contacts. FIG. 23 is an isometric view of theplural differential pair transistor circuit 300. The first differentialpair of transistors 302 and 304 and second differential pair oftransistors 306 and 308 are illustrated in FIG. 23. Transistor 302 isformed by a first gate electrode 402 on a first body area 404 having thefirst drain 314 and source 310. Transistor 306 is formed by a secondgate electrode 406 that shares the first body area 404, first drain 314,and source 310 with transistor 302. As in FIG. 22, transistors 302 and306 share the same source 310, same drain 314, and same gate input Vin1(320) since the first gate electrode 402 and second gate electrode 406are coupled together. Furthermore, since transistors 302 and 306 sharefirst body area 406 in FIG. 23, their bodies are essentially coupledtogether as in FIG. 22.

The second parallel pair of transistors 304 and 308 are illustrated inFIG. 23. Transistor 304 is formed by a third gate electrode 408 on asecond body area 410 having the second drain 316 and source 310.Transistor 308 is formed by a fourth gate electrode 412 that shares thesecond body area 410, second drain 316, and source 310 with transistor304. As in FIG. 22, transistors 304 and 308 share the same source 310,same second drain 316, and same gate input Vin2 (322) since the thirdgate electrode 408 and fourth gate electrode 412 are coupled together.Furthermore, since transistors 304 and 308 share second body area 410 inFIG. 23, their bodies are essentially coupled together as in FIG. 22.

Also like FIG. 22, the bodies of all the transistors 302, 304, 306, and308 are coupled together having a common body node 326. A first top finarea 414 may extend from the first body area 404. The first top fin area414 may have a first body contact 416 coupled to the first top fin area414. In addition, a second top fin area 418 may extend from the secondbody area 410. The second top fin area 418 may have a second bodycontact 420 coupled to it. Through an electrical connection of the firstand second body contacts 416 and 420, the first and second body areas404 and 410 may share the same body voltage. This results in transistors302, 304, 306, and 308 having substantially the same body voltage orelectrical connections.

In one embodiment, the first and second body contacts 416 and 420 may beone continuous body contact, contacting first and second top fin areas414 and 418. In another embodiment, the first and second body areas 404and 410 may be coupled to the source 310.

In yet another embodiment, an epitaxial growth may arise from the source310 making a continuous top fin area extending from the first body area404 to the second body area 410, thereby coupling first body 404, secondbody 410, and source 310.

In another embodiment, one or more fins may be grown in parallel withthe existing fin to accommodate for three or more differential pairs oftransistors in the plural differential pair transistor circuit 300.

In one embodiment, the transistors 302, 304, 306, and 308 may be NFETdevices. In an alternative embodiment, the transistors 302, 304, 306,and 308 may be PFET devices.

FIG. 24 illustrates a plural differential pair transistor circuit 500,according to various embodiments. In the circuit 500, a firstdifferential pair of transistors 502, 504 may operate independently of asecond differential pair of transistors 506, 508. The circuit 500includes two-input multiplexors 528 a, 528 b, 528 c, and 528 d that mayfacilitate the independent operation of the first and seconddifferential pairs.

Like FIG. 22, the source nodes of transistors 502, 504, 506, and 508 arecoupled at a common source node 510 with a current source 512. Thecurrent source 512 may be any suitable current source, such as atransistor current source. A terminal of the current source 512 may becoupled with a ground as shown. The drain nodes of transistors 502 and506 are coupled at a common drain node 514. A resistor R1 couples commondrain node 514 to supply voltage (Vcc) 518. The drain nodes oftransistors 504 and 508 are coupled at a common drain node 516. Aresistor R2 couples common drain node 516 to Vcc 518. The resistors R1and R2 may be any suitable resistive elements, such as resistors ortransistors. All of the transistors 502, 504, 506, and 508 in the pluraldifferential pair transistor circuit 500 may have their body contactscoupled together at body node 526. It may be an advantage to have thebody contacts of the transistors 502, 504, 506, and 508 coupled togetherso the bodies of the transistors have substantially equal voltages,thereby giving the transistors substantially equal threshold voltages.

In the shown embodiment, first and second differential pairs oftransistors are capable of being operated independently. The gateelectrodes of transistors 502, 504, 506, and 508 all have independentinputs. The gate electrode of transistor 502 is designated inputV_(IN)-a1. The gate electrode of transistor 504 is designated inputV_(IN)-a2. The gate electrode of transistor 506 is designated inputV_(IN)-b1. The gate electrode of transistor 508 is designated inputV_(IN)-b2. V_(IN)-a1 is coupled with the output of the multiplexor 528a. V_(IN)-a2 is coupled with the output of a multiplexor 528 b.V_(IN)-b1 is coupled with the output of the multiplexor 528 c. V_(IN)-b2is coupled with the output of the multiplexor 528 d.

In some implementations, it may be desirable to turn off the transistorsof one differential pair while operating the other differential pair.For example, if the first differential pair of transistors 502, 504 areturned on, they may interfere with the operation of the seconddifferential pair of transistors 506, 508. The interference may occurbecause the differential pairs share the common source node 510.

The two-input multiplexors 528 a, 528 b, 528 c, and 528 d may beemployed to turn off the first differential pair of transistors 502, 504while allowing the second differential pair of transistors 506, 508 toreceive input signals. Each multiplexor may receive signals S or S. Smay be the complement signal of S. Furthermore, multiplexor 528 a has aninput signal of A, which may be outputted by multiplexor 528 a asV_(IN)-a1 if A is the selected signal. Multiplexor 528 b has thecomplement of A as an input signal A, which may be output by multiplexor528 b as V_(IN)-a2 if A is the selected signal. Multiplexor 528 c has aninput signal B, which may be output by multiplexor 528 c as V_(IN)-b1 ifB is the selected signal. Multiplexor 528 d has the complement of B asan input signal, B, which may be output by multiplexor 528 d asV_(IN)-b1 if B is the selected signal.

In the shown embodiment, if S is asserted (and S is not asserted), thefirst differential pair of transistors 502, 504 are operable to receiveinput signals A and A, respectively. In addition, if S is asserted (andS is not asserted), the second differential pair of transistors 506, 508are turned off. Assertion of the S select signal causes the inputsV_(IN)-b1 and V_(IN)-b2 to be coupled with ground.

In the shown embodiment, if S is not asserted (and S is asserted), thesecond differential pair of transistors 506, 508 are operable to receiveinput signals B and B, respectively. In addition, if S is not asserted(and S is asserted), the first differential pair of transistors 502, 504are turned off. Assertion of the S select signal causes the inputsV_(IN)-a1 and V_(IN)-a2 to be coupled with ground.

While the invention has been described with reference to the specificembodiments thereof, those skilled in the art will be able to makevarious modifications to the described embodiments of the inventionwithout departing from the true spirit and scope of the invention. Theterms and descriptions used herein are set forth by way of illustrationonly and are not meant as limitations. Those skilled in the art willrecognize that these and other variations are possible within the spiritand scope of the invention as defined in the following claims and theirequivalents.

What is claimed is:
 1. A fin field effect transistor (FinFET)comprising: a semiconductor fin formed on a substrate, the fin furtherincluding a body area having substantially the same width between two ormore vertical surfaces of the fin and a top fin area extending from thebody area, the width of the top fin area increases from being the widthof the body area at a base of the top fin area to being wider than thewidth of the body area at a top of the top fin area; a first FET havinga first gate electrode comprising a first gate electrode conductorsubstantially formed to a first one of the two or more vertical surfacesof the body area of the fin, the body area separated from the first gateelectrode conductor by a first gate oxide layer; a second FET having asecond gate electrode comprising a second gate electrode conductorsubstantially formed to a second one of the two or more verticalsurfaces of the body area of the fin, the body area separated from thesecond gate electrode conductor by a second gate oxide layer, whereinthe second gate electrode is electrically independent from the firstgate electrode; and a body contact structure in electrical communicationwith the top of the top fin area.
 2. The FinFET of claim 1, wherein thefin further includes a first source/drain area on a first side of thebody area and a second source/drain area on a second side of the bodyarea, the body area between the first source/drain area and the secondsource/drain area.
 3. The FinFET of claim 1, wherein the body contactstructure is electrically insulated from the first and second gateelectrodes.
 4. The FinFET of claim 1, wherein a height of the first gateelectrode and the second gate electrode above the substrate is adaptedto electrically isolate the first gate electrode and second gateelectrode from the top fin area.
 5. The FinFET of claim 1, wherein theFinFET is an NFET.
 6. The FinFET of claim 1, wherein the FinFET is aPFET.
 7. The FinFET of claim 1, wherein the top fin area is an epitaxialgrowth.